Preparation and Properties of ZrW2O8 Thin Films Deposited by Pulsed Laser Deposition

ZrW2O8 thin films were deposited on quartz substrates by pulsed laser deposition method. Effects of substrate temperature on the microstructure, composition, surface roughness and morphology of the ZrW2O8 thin films were observed by X―ray diffraction (XRD) and atomic force microscope (AFM). The thickness and optical transmittance of the ZrW2O8 thin films were measured by surface profilometer and spectrophotometer respectively. The negative thermal expansion property of the ZrW2O8 thin film was measured by high temperature X―ray diffraction. The results indicate that the as―deposited ZrW2O8 thin films deposited at the substrate temperature of room temperature, 550 and 650 are amorphous phase, and the cubic ZrW2O8 thin film can be obtained after annealing at 1200 for 3 min and then quenching in water. With the increase of deposition temperature, the surface roughness decreases markedly. The optical transmittances of the ZrW2O8 thin films prepared at different condition are about 80%, and the negative thermal expansion coefficient of the resulting cubic ZrW2O8 thin film is ―11.378×10―6 K―1 in the temperature range from 20 to 600 .