%0 Journal Article
%T Preparation and Properties of ZrW2O8 Thin Films Deposited by Pulsed Laser Deposition
%A LIU Hong-Fei
%A ZHANG Zhi-Ping
%A ZHANG Wei
%A CHEN Xiao-Bing
%A CHENG Xiao-Nong
%J 无机材料学报
%D 2011
%I Science Press
%R 10.3724/sp.j.1077.2011.00540
%X ZrW2O8 thin films were deposited on quartz substrates by pulsed laser deposition method. Effects of substrate temperature on the microstructure, composition, surface roughness and morphology of the ZrW2O8 thin films were observed by X―ray diffraction (XRD) and atomic force microscope (AFM). The thickness and optical transmittance of the ZrW2O8 thin films were measured by surface profilometer and spectrophotometer respectively. The negative thermal expansion property of the ZrW2O8 thin film was measured by high temperature X―ray diffraction. The results indicate that the as―deposited ZrW2O8 thin films deposited at the substrate temperature of room temperature, 550   and 650   are amorphous phase, and the cubic ZrW2O8 thin film can be obtained after annealing at 1200    for 3 min and then quenching in water. With the increase of deposition temperature, the surface roughness decreases markedly. The optical transmittances of the ZrW2O8 thin films prepared at different condition are about 80%, and the negative thermal expansion coefficient of the resulting cubic ZrW2O8 thin film is ―11.378×10―6 K―1 in the temperature range from 20   to 600  .
%K ZrW2O8
%K thin film
%K pulsed laser deposition
%K negative thermal expansion
%K transmittance
%U http://www.jim.org.cn/fileup/PDF/20110518.pdf