Simple Modelling Approach for Via-Hole Characterization on Silicon Substrate at Ka-Band

This work presents a simple model of via-hole using electromagnetic field solver. Equivalent model parameters on Si are found out at Ka-band. Proposed single via-hole model has been compared with theoretical published data. The effect of via-hole radius and substrate height at Ka-band frequencies has been studied. Further, S-parameter analysis and comparison for multiple vias at two different frequency bands is carried out.