%0 Journal Article
%T Simple Modelling Approach for Via-Hole Characterization on Silicon Substrate at Ka-Band
%A K. Singh
%A K. Nagachenchaiah
%J Microwave Review
%D 2011
%I Society for Microwave Technique, Technologies and Systems, Serbia and Montenegro IEEE MTT-S Chapter
%X This work presents a simple model of via-hole using electromagnetic field solver. Equivalent model parameters on Si are found out at Ka-band. Proposed single via-hole model has been compared with theoretical published data. The effect of via-hole radius and substrate height at Ka-band frequencies has been studied. Further, S-parameter analysis and comparison for multiple vias at two different frequency bands is carried out.
%K Via-hole
%K Radio-frequency
%K High resistivity substrate
%K Conductor backed- CPW (CB-CPW)
%K Grounding
%U http://www.mtt-serbia.org.rs/microwave_review/pdf/Vol17No1-05-KSingh.pdf