Silicon high-voltage unpackaged switching microwave p–i–n-diodes with a breakdown voltage up to 2000 V

Results of design, manufacturing and research of silicon unpackaged high-voltage microwave p–i–n-diodes are presented. Possibility to achieve the breakdown voltage up to 2000 V for the p–i–n-diodes with 200 microns base thickness and step type of i-zone lateral side is shown.