%0 Journal Article
%T Silicon high-voltage unpackaged switching microwave p每i每n-diodes with a breakdown voltage up to 2000 V
%A Krivutsa V. A.
%A Basanets V. V.
%A Boltovets M. S.
%A Ivanov V. M.
%J Tekhnika i Pribory SVCh
%D 2010
%I 
%X Results of design, manufacturing and research of silicon unpackaged high-voltage microwave p每i每n-diodes are presented. Possibility to achieve the breakdown voltage up to 2000 V for the p每i每n-diodes with 200 microns base thickness and step type of i-zone lateral side is shown.
%K p-i-n-diode
%K mesostrukture
%K stepped profile
%K the breakdown voltage
%K direct loss resistance
%U http://www.tkea.com.ua/svc/2010/1_2010/pdf/04.zip