The resonant frequency of Gunn diodes based on InGaP, InAlAs, InGaSb, InGaAs and InPAs graded-gap semiconductors

The dynamics of domains in devices based on graded-gap semiconductors was studied. It is shown that the length of the domain drift region and the oscillation frequency in such n+–n–n+-devices depends on the applied voltage. It is shown that the use of graded-gap semiconductors can increase the width of the Gunn diodes’ operating frequency.