%0 Journal Article
%T The resonant frequency of Gunn diodes based on InGaP, InAlAs, InGaSb, InGaAs and InPAs graded-gap semiconductors
%A Storozhenko I. P.
%A Zhivotova E. N.
%J Tekhnika i Pribory SVCh
%D 2011
%I 
%X The dynamics of domains in devices based on graded-gap semiconductors was studied. It is shown that the length of the domain drift region and the oscillation frequency in such n+¨Cn¨Cn+-devices depends on the applied voltage. It is shown that the use of graded-gap semiconductors can increase the width of the Gunn diodesĄŻ operating frequency.
%K Gunn diode
%K graded-gap semiconductor
%K generation
%K resonant frequency
%U http://www.tkea.com.ua/svc/2011/2_2011/pdf/09.zip