Increasing of average pulse power of millimeter wave range generators by IMPATT diodes on ring structures

Results of researches of sources of pulse microwave power with use of IMPATT diodes are presented. For creation of diodes were used the silicon double drift structures with a flat profile of p+–n–n–n+-type impurity. It is shown the possibility of increasing an average microwave power of IMPATT diode without use of a diamond heat-conducting path in a millimeter range of wavelength in a quasi continuous operating mode with the use of ring structures.