%0 Journal Article
%T Increasing of average pulse power of millimeter wave range generators by IMPATT diodes on ring structures
%A Karushkin N. F.
%J Tekhnika i Pribory SVCh
%D 2011
%I 
%X Results of researches of sources of pulse microwave power with use of IMPATT diodes are presented. For creation of diodes were used the silicon double drift structures with a flat profile of p+¨Cn¨Cn¨Cn+-type impurity. It is shown the possibility of increasing an average microwave power of IMPATT diode without use of a diamond heat-conducting path in a millimeter range of wavelength in a quasi continuous operating mode with the use of ring structures.
%K avalanche-transit diode
%K ring structure
%K source of microwave power
%K pulse mode
%K millimeter waves
%U http://www.tkea.com.ua/svc/2011/2_2011/pdf/08.zip