Ohmic contacts of microwave MESFET by cryogenic temperatures

Conducted studies of the properties of ohmic contacts rс of microwave field-effect transistors with a Schottky barrier on gallium arsenide cooled to cryogenic temperatures. It is shown that a significant influence on the temperature dependence with a surface structure of the ohmic contacts, and for use in transistors operating at low temperatures, should be used only technology for forming a contact which provides fine-grain morphology and in which the contribution of thermal emission in the charge transport is negligible.