%0 Journal Article
%T Ohmic contacts of microwave MESFET by cryogenic temperatures
%A Ivashchuk §¡. V.
%J Tekhnika i Pribory SVCh
%D 2010
%I 
%X Conducted studies of the properties of ohmic contacts r§ã of microwave field-effect transistors with a Schottky barrier on gallium arsenide cooled to cryogenic temperatures. It is shown that a significant influence on the temperature dependence with a surface structure of the ohmic contacts, and for use in transistors operating at low temperatures, should be used only technology for forming a contact which provides fine-grain morphology and in which the contribution of thermal emission in the charge transport is negligible.
%K ohmic contact
%K FET
%K gallium arsenide
%K morphology
%K specific contact resistance
%K cooling
%U http://www.tkea.com.ua/svc/2010/1_2010/pdf/09.zip