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OALib Journal期刊
ISSN: 2333-9721
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EFFECT OF THE CUSP MAGNETIC FIELD ON FLOW FIELD AND PULLING RATE DURING SI SINGLE CRYSTAL GROWTH PROCESSES
硅生长过程中尖形磁场对流场及提拉速率的影响

Keywords: Czochralski method,silicon single crystal,flowoscillation,pulling rate
提拉法
,单晶硅,流动振荡,提拉速率

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Abstract:

The growth process of industrial 8 inch single crystals is simulated by FLUTRAP(fluid flow and transport phenomena program), which is based on non-orthogonal grid and finite-volume method. The results show that the flow field inside the crucible and the pulling rate are oscillating during the growth processes. The pulling rate is fluctuating with a period of about 2 minutes. The fluctuation amplitude of the pulling rate could be reduced by applying a cusp magnetic field.

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