Thermal radiation characteristics of plane-parallel SiC wafer

The spectral and directional absorptivity of plane-parallel SiC wafer is investigated in the IR region. The result demonstrates that interference takes place for thermal radiation emitted by plane-parallel SiC layers of the thick- ness from several tens to 100 microns. Owing to particular optical property of SiC, the spectral absorptivity of 10-mi- cron radiant wave is 0.98, close to 1, the absorptivity of black body. Nevertheless, the absorptivity approaches 0 in the range from 10.5 to 12.4 microns wavelength. Our calculation also shows that total hemispherical emissivity relates to wa- fer's temperature. It is between 300 and 500K where higher total hemispherical emissivity exists.