%0 Journal Article
%T Thermal radiation characteristics of plane-parallel SiC wafer
%A Maohua Han
%A Xingang Liang
%A Yong Huang
%A <br>HANMaohua
%A LIANGXingang
%A HUANGYong
%J 科学通报(英文版)
%D 2005
%I 
%X The spectral and directional absorptivity of plane-parallel SiC wafer is investigated in the IR region. The result demonstrates that interference takes place for thermal radiation emitted by plane-parallel SiC layers of the thick- ness from several tens to 100 microns. Owing to particular optical property of SiC, the spectral absorptivity of 10-mi- cron radiant wave is 0.98, close to 1, the absorptivity of black body. Nevertheless, the absorptivity approaches 0 in the range from 10.5 to 12.4 microns wavelength. Our calculation also shows that total hemispherical emissivity relates to wa- fer's temperature. It is between 300 and 500K where higher total hemispherical emissivity exists.
%K SiC
%K thin film
%K thermal radiation
%K optical property
%K inter- ference<br>热散射特征
%K 碳化硅
%K 薄膜材料
%K 光学特征
%K 电磁场
%K 半导体材料
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=01BA20E8BA813E1908F3698710BBFEFEE816345F465FEBA5&cid=96E6E851B5104576C2DD9FC1FBCB69EF&jid=DD6615BC9D2CFCE0B6F945E8D5314523&aid=48F1D82BC80F3A89C16EC2D1DF33953A&yid=2DD7160C83D0ACED&vid=771152D1ADC1C0EB&iid=E158A972A605785F&sid=AF507FDD66D991DA&eid=88D36036CFF69B3C&journal_id=1001-6538&journal_name=科学通报(英文版)&referenced_num=0&reference_num=16