Point defects in active layers of TFEL devices based on ZnS

Point defects in the active layer of a layered optimization thin film electroluminescent device of ZnS; Er3+ were studied. The results indicate that besides Er3+ substituting for Zn2+ as luminescent centers, the dominant point defects are sulfur vacancies, zinc vacancies, shallow donors and deep acceptors. Their influence on electroluminescence is discussed.