%0 Journal Article
%T Point defects in active layers of TFEL devices based on ZnS<br>
%A Zhidong Lou
%A A N Georgobiani
%A Zheng Xu
%A Chunxiang Xu
%A Feng Teng
%A Lei Yu
%A Xurong Xu
%A <br>
%J 科学通报(英文版)
%D 1998
%I 
%X Point defects in the active layer of a layered optimization thin film electroluminescent device of ZnS; Er3+ were studied. The results indicate that besides Er3+ substituting for Zn2+ as luminescent centers, the dominant point defects are sulfur vacancies, zinc vacancies, shallow donors and deep acceptors. Their influence on electroluminescence is discussed.
%K spectra of photoluminescence
%K point defects
%K thin film electroluminescence<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=01BA20E8BA813E1908F3698710BBFEFEE816345F465FEBA5&cid=96E6E851B5104576C2DD9FC1FBCB69EF&jid=DD6615BC9D2CFCE0B6F945E8D5314523&aid=F0D87210BA8D044C8B2FEECF8539BC1D&yid=8CAA3A429E3EA654&vid=BE33CC7147FEFCA4&iid=B31275AF3241DB2D&sid=AE43DE0664B02889&eid=AE43DE0664B02889&journal_id=1001-6538&journal_name=科学通报(英文版)&referenced_num=0&reference_num=14