%0 Journal Article %T Point defects in active layers of TFEL devices based on ZnS
%A Zhidong Lou %A A N Georgobiani %A Zheng Xu %A Chunxiang Xu %A Feng Teng %A Lei Yu %A Xurong Xu %A
%J 科学通报(英文版) %D 1998 %I %X Point defects in the active layer of a layered optimization thin film electroluminescent device of ZnS; Er3+ were studied. The results indicate that besides Er3+ substituting for Zn2+ as luminescent centers, the dominant point defects are sulfur vacancies, zinc vacancies, shallow donors and deep acceptors. Their influence on electroluminescence is discussed. %K spectra of photoluminescence %K point defects %K thin film electroluminescence
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=01BA20E8BA813E1908F3698710BBFEFEE816345F465FEBA5&cid=96E6E851B5104576C2DD9FC1FBCB69EF&jid=DD6615BC9D2CFCE0B6F945E8D5314523&aid=F0D87210BA8D044C8B2FEECF8539BC1D&yid=8CAA3A429E3EA654&vid=BE33CC7147FEFCA4&iid=B31275AF3241DB2D&sid=AE43DE0664B02889&eid=AE43DE0664B02889&journal_id=1001-6538&journal_name=科学通报(英文版)&referenced_num=0&reference_num=14