Photoluminescence from Si_based SiN_xO_y films

B+, C+, Si+, and As+ with dose of 5 × 1016 cm 2 were implanted into SiNxOy, films grown on crystalline silicon by plasma-enhanced chemical vapor deposition. The ion-implanted samples exhibit their photoluminescence with different intensities and different peak wavelengths after thermal annealing. Especially, the C+-implanted SiNxOy, films show very intense photoluminescence at green-yellow color region.