%0 Journal Article
%T Photoluminescence from Si_based SiN_xO_y films<br>
%A Liangsheng Liao
%A Xiaobing Liu
%A Zuhong Xiong
%A Shuai Yuan
%A Xiaoyuan Hou
%A <br>
%J 科学通报(英文版)
%D 1998
%I 
%X B+, C+, Si+, and As+ with dose of 5 × 1016 cm 2 were implanted into SiNxOy, films grown on crystalline silicon by plasma-enhanced chemical vapor deposition. The ion-implanted samples exhibit their photoluminescence with different intensities and different peak wavelengths after thermal annealing. Especially, the C+-implanted SiNxOy, films show very intense photoluminescence at green-yellow color region.
%K silicon-based light-emitting materials
%K photoluminescence
%K ion implantation<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=01BA20E8BA813E1908F3698710BBFEFEE816345F465FEBA5&cid=96E6E851B5104576C2DD9FC1FBCB69EF&jid=DD6615BC9D2CFCE0B6F945E8D5314523&aid=7A5539872333066A2B72989B5E76ECA4&yid=8CAA3A429E3EA654&vid=BE33CC7147FEFCA4&iid=0B39A22176CE99FB&sid=2F56B21F91C9B05B&eid=2F56B21F91C9B05B&journal_id=1001-6538&journal_name=科学通报(英文版)&referenced_num=0&reference_num=4