Optical characterization of SOI Materials based on effective dielectric functions
基于有效介电函数的SOI材料的光学表征

The microstructure of silicon on insulator (SOI) was investigated by rutherford back scattering spectrometry (RBS), transmission electron microscope (TEM), auger electron spectroscopy (AES) and infrared reflection (IR) in other literatures. By analyzing and studying, a multi-layer stack configuration model of SOI with effective medium approximation function is set up. An optical characterization, based on the model, has been developed by simulation of infrared reflection spectrum using the aggregating reflection coefficients method. The result shows that the way of infrared reflection spectra is a sensitive analytical technique, which is capable of providing accurate optical character information, not only on the volume fraction of the inclusion of Si islands, but also on their geometric distribution.