Second-order compensated CMOS bandgap voltage reference
一种二阶补偿的CMOS带隙基准电压源

A novel proposed second-order compensated CMOS bandgap voltage reference (BGR) is presented. The second -order temperature curvature compensation is accomplished effectively by the channel modulation effect of the MOSFET, and the specific qualifications of the second-order temperature curvature compensation are analyzed and given. The Ca-dence simulation results based on standard CMOS 0.35 μm technology show that the temperature coefficient of the first-or-der compensated BGR is 9.5 ppm/℃ ,while the proposed second-order compensated BGR has 2.7 ppm/℃ low tempera-ture coefficient over the wide temperature range of -50°～ + 120℃.