%0 Journal Article
%T Second-order compensated CMOS bandgap voltage reference<br>一种二阶补偿的CMOS带隙基准电压源
%A ZHOU Wei
%A WU Gui-neng
%A LI Ru-zhang
%A <br>周玮
%A 吴贵能
%A 李儒章
%J 重庆邮电大学学报(自然科学版)
%D 2009
%I 
%X A novel proposed second-order compensated CMOS bandgap voltage reference (BGR) is presented. The second -order temperature curvature compensation is accomplished effectively by the channel modulation effect of the MOSFET, and the specific qualifications of the second-order temperature curvature compensation are analyzed and given. The Ca-dence simulation results based on standard CMOS 0.35 μm technology show that the temperature coefficient of the first-or-der compensated BGR is 9.5 ppm/℃ ,while the proposed second-order compensated BGR has 2.7 ppm/℃ low tempera-ture coefficient over the wide temperature range of -50°～ + 120℃.
%K bandgap voltage reference (BGR)
%K curvature compensation
%K second-order compensation
%K low temperature coeffi-cient<br>带隙基准电压源
%K 曲率补偿
%K 二阶补偿
%K 低温度系数
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=01BA20E8BA813E1908F3698710BBFEFEE816345F465FEBA5&cid=96E6E851B5104576C2DD9FC1FBCB69EF&jid=5C2694A2E5629ECD6B59D7B28C6937AD&aid=13D7A2804E4D030E64D7EB4BCC211AC7&yid=DE12191FBD62783C&vid=659D3B06EBF534A7&iid=CA4FD0336C81A37A&sid=46CB27789995047D&eid=0D0D661F0B316AD5&journal_id=1673-825X&journal_name=重庆邮电大学学报(自然科学版)&referenced_num=3&reference_num=12