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金属学报(英文版) 2001
LASER LIFT-OFF OF GaN THIN FILMS FROM SAPPHIRE SUBSTRATESKeywords: CaN,lift-off,freestanding,photoluminescence,X-ray diffraction,atomic force microscopy Abstract: 1. IntroductionRecently the development of GaN-based blue and blue-green light-emitting devices hasproceeded rapidlyl1] t which will enable the appllcation of b1ue light-emittil1g diodes (LED3)and laser diodes (LDs)l']. However, due to lack of the native substrates, films of GaN areusually grown on dissimilar substrates such as sapphire and SiCl3l4]. The most commonlyused growth substrate, sapphire, still restricts the quaJity of GaN film due to the latticeand thermaLexpansion coefficien…
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