%0 Journal Article
%T LASER LIFT-OFF OF GaN THIN FILMS FROM SAPPHIRE SUBSTRATES
%A J Xu
%A <br>J. Xu
%A R. Zhang
%A Y.P. Wang
%A X.Q. Xiu
%A S.L. Gu
%A B. Shen
%A Y. Shi
%A Z.G. Liu and Y.D. Zheng
%J 金属学报(英文版)
%D 2001
%I 
%X 1. IntroductionRecently the development of GaN-based blue and blue-green light-emitting devices hasproceeded rapidlyl1] t which will enable the appllcation of b1ue light-emittil1g diodes (LED3)and laser diodes (LDs)l']. However, due to lack of the native substrates, films of GaN areusually grown on dissimilar substrates such as sapphire and SiCl3l4]. The most commonlyused growth substrate, sapphire, still restricts the quaJity of GaN film due to the latticeand thermaLexpansion coefficien…
%K CaN
%K lift-off
%K freestanding
%K photoluminescence
%K X-ray diffraction
%K atomic force microscopy<br>
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=AB188D3B70B071C57EB64E395D864ECE&jid=C19B08D052F5FD8445F4BB80A1A5D7BF&aid=24AA60BFDBBD56184B1A33F70BF4AA68&yid=14E7EF987E4155E6&vid=F3583C8E78166B9E&iid=B31275AF3241DB2D&sid=A6683C8C0EB9BCA7&eid=30F3EEEA29E34EE7&journal_id=1006-7191&journal_name=金属学报(英文版)&referenced_num=0&reference_num=10