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金属学报 2004
Impact of Residual Oxygen on Hardness of Nano Structured TiN+Si3N4 Film
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Abstract:
Using direct current plasma enhanced chemical vapor deposition (PCVD) techniques, the nanocomposite films of nc-TiN + a-Si3N4 were synthesized. The detrimental effects of residual oxygen on the films hardness were explored. A minor content of residual oxygen can strongly decrease the hardness of the superhard film. Oxygen impurity of 1%-1.5% (atomic fraction) can make the hardness of film decrease to about 30 GPa as compared to 45-55 GPa for the film with below 0.2% oxygen, which is related to the formation of SiOx at interface of crystalline.
