Influence of Bias Voltage on Diamond-Like Carbon Film Deposited by Arc Ion Plating
偏压对电弧离子镀沉积类金刚石膜的影响

The microstructures of the diamond-like carbon (DLC) films deposited on Si (100) substrate by using arc ion plating (AIP) under different pulse bias voltage were characterized using Raman spectra and X-ray photoelectron spectra (XPS). The results show that the ratio I_D/I_G decreases and sp~3 bond content increases with increasing pulse bias voltage firstly, and then the ratio I_D/I_G increases and sp~3 bond content decreases after the pulse bias voltage exceeding -200 V. The minimal ratio I_D/I_G is 0.70 and the content of sp~3 bond is 26.7% at the bias voltage of -200 V. The hardness and modulus determined by using nanoindentation technique increase and then decrease with increasing pulse bias voltage. The hardness and modulus of the DLC films obtained at bias voltage of -200 V reaches a maximum value of 30.8 and 250.1 GPa, respectively.