%0 Journal Article
%T Influence of Bias Voltage on Diamond-Like Carbon Film Deposited by Arc Ion Plating<br>偏压对电弧离子镀沉积类金刚石膜的影响
%A ZOU Yousheng
%A WANG Wei
%A ZHENG Jingdi
%A SUN Chao
%A HUANG Rongfang
%A WEN Lishi
%A <br>邹友生
%A 汪伟
%A 郑静地
%A 孙超
%A 黄荣芳
%A 闻立时
%J 金属学报
%D 2004
%I 
%X The microstructures of the diamond-like carbon (DLC) films deposited on Si (100) substrate by using arc ion plating (AIP) under different pulse bias voltage were characterized using Raman spectra and X-ray photoelectron spectra (XPS). The results show that the ratio I_D/I_G decreases and sp~3 bond content increases with increasing pulse bias voltage firstly, and then the ratio I_D/I_G increases and sp~3 bond content decreases after the pulse bias voltage exceeding -200 V. The minimal ratio I_D/I_G is 0.70 and the content of sp~3 bond is 26.7% at the bias voltage of -200 V. The hardness and modulus determined by using nanoindentation technique increase and then decrease with increasing pulse bias voltage. The hardness and modulus of the DLC films obtained at bias voltage of -200 V reaches a maximum value of 30.8 and 250.1 GPa, respectively.
%K diamond-like carbon film
%K arc ion plating
%K pulse bias voltage
%K microstructure
%K mechanical property<br>类金刚石膜
%K 电弧离子镀
%K 脉冲偏压
%K 结构
%K 力学性能
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=AB188D3B70B071C57EB64E395D864ECE&jid=B061E1135F1CBDEE96CD96C109FEAD65&aid=0332E0F0AF3E503C&yid=D0E58B75BFD8E51C&vid=1371F55DA51B6E64&iid=94C357A881DFC066&sid=FD207D3C5E9776FA&eid=DFBC046213B3DD86&journal_id=0412-1961&journal_name=金属学报&referenced_num=4&reference_num=36