ELECTRON-BEAM INDUCED NUCLEATION AND GROWTH IN AMORPHOUS GaAs
电子束诱导非晶GaAs晶化的形核与长大

In situ observation of electron-beam-irradiation induced crystallization in amorphous GaAs has been performed using high-resolution electron microscopy. The results show that clusters with the size of several atoms formed during the initial irradiation, and crystallization occurred along the clusters. Most of the crystallized grains have the same crystallographic orientation, and the others are twinning with the former. The crystallization rate is closely related to the electron-beam current. The crystallization is contributed to the electron energy rather than the temperature increase induced by electron beam. The mechanism and model for the crystallization induced by irradiation have been discussed.