%0 Journal Article
%T ELECTRON-BEAM INDUCED NUCLEATION AND GROWTH IN AMORPHOUS GaAs<br>电子束诱导非晶GaAs晶化的形核与长大
%A LI Zhicheng
%A LIU Lu
%A HE Lianlong
%A XU Yongbo
%A <br>李志成
%A 刘路
%A 贺连龙
%A 徐永波
%J 金属学报
%D 2003
%I 
%X In situ observation of electron-beam-irradiation induced crystallization in amorphous GaAs has been performed using high-resolution electron microscopy. The results show that clusters with the size of several atoms formed during the initial irradiation, and crystallization occurred along the clusters. Most of the crystallized grains have the same crystallographic orientation, and the others are twinning with the former. The crystallization rate is closely related to the electron-beam current. The crystallization is contributed to the electron energy rather than the temperature increase induced by electron beam. The mechanism and model for the crystallization induced by irradiation have been discussed.
%K amorphous GaAs
%K electron-beam irradiation
%K crystallization
%K in situ observation<br>电子束诱导
%K 非晶GaAs
%K 晶化
%K 电子束辐照
%K 结晶
%K 原位观察
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=AB188D3B70B071C57EB64E395D864ECE&jid=B061E1135F1CBDEE96CD96C109FEAD65&aid=687CB394C2CBDA25&yid=D43C4A19B2EE3C0A&vid=7C3A4C1EE6A45749&iid=CA4FD0336C81A37A&sid=FC0714F8D2EB605D&eid=7801E6FC5AE9020C&journal_id=0412-1961&journal_name=金属学报&referenced_num=0&reference_num=15