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金属学报 2005
Infrared properties and mechanism of Al-doped ZnO thin films
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Abstract:
Al-doped zinc oxide (ZAO) thin films were prepared by middle-frequency alternative magnetron sputtering with ZAO (ZnO+2%Al2O3) ceramic target. IR (infrared reflection) spectrom-etry was used to examine infrared reflection properties. The influences of film thickness, substrate temperature and argon gas pressure on the performances of ZAO thin films were investigated. The technical parameters for depositing ZAO films with high infrared reflection were determined.
