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金属学报  1993 

PLASMA CHEMICAL VAPOUR DEPOSITION OF Ti-N-C FILMS
等离子体化学气相沉积Ti—N—C膜的研究

Keywords: plasma chemical vapour deposition,Ti-N-C film,TiN film
Ti-N-C膜
,TiN膜,PCVD

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Abstract:

Plasma chemical vapour deposited (PCVD) Ti-N-C films with different C and N contents were examined, in comparison with C-free ones, by XPS, AES, XRD, SEM and microhardness testing. The PCVD Ti-N-C film may attribute its superior wear resist- ance to its high microhardness and dense structure. The variety of valence state of oxygen atoms adsorbed on Ti-N-C or TiN film surface was detected by AES and XPS analyses. Whether or not sufficient C atoms, existing in the lattice of the films seems to be decisive. Dif- ferent states of oxygen adsorbed may cause different modes of abrasive damage of film.

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