%0 Journal Article
%T PLASMA CHEMICAL VAPOUR DEPOSITION OF Ti-N-C FILMS<br>等离子体化学气相沉积Ti—N—C膜的研究
%A ZHAO Cheng
%A PENG Hongrui
%A LI Shizhi Qingdao Institute of Chemical Technology
%A <br>赵程
%A 彭红瑞
%A 李世直
%J 金属学报
%D 1993
%I 
%X Plasma chemical vapour deposited (PCVD) Ti-N-C films with different C and N contents were examined, in comparison with C-free ones, by XPS, AES, XRD, SEM and microhardness testing. The PCVD Ti-N-C film may attribute its superior wear resist- ance to its high microhardness and dense structure. The variety of valence state of oxygen atoms adsorbed on Ti-N-C or TiN film surface was detected by AES and XPS analyses. Whether or not sufficient C atoms, existing in the lattice of the films seems to be decisive. Dif- ferent states of oxygen adsorbed may cause different modes of abrasive damage of film.
%K plasma chemical vapour deposition
%K Ti-N-C film
%K TiN film<br>Ti－N－C膜
%K TiN膜
%K PCVD
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=AB188D3B70B071C57EB64E395D864ECE&jid=B061E1135F1CBDEE96CD96C109FEAD65&aid=9D6A0706ECC10733E7D2C9754CCFD2C3&yid=D418FDC97F7C2EBA&vid=771469D9D58C34FF&iid=CA4FD0336C81A37A&sid=117F81797AB182FC&eid=08805F9252973BA4&journal_id=0412-1961&journal_name=金属学报&referenced_num=2&reference_num=1