THREE-DIMENSIONAL MATHEMATICAL MODELING OF TRANSPORT PROCESSES IN CVD REACTORS
CVD反应器传输过程的三维数学模型

A mathematical model to represent the fluid flow, temperature distri-bution and mass transfer in CVD reactors has been developed. The model is usedto predict the velocity, temperature, and molar concentration profiles in the taper-ed annulus of a reactor for silicon deposition from SiCl_4 in H_2. Results of theinvestigation contribute to the understanding of the transport processes involved insuch a system. The model can also be used for optimizing the design parameters,such as inlet flow rate, susceptor tilt angle, etc.