%0 Journal Article
%T THREE-DIMENSIONAL MATHEMATICAL MODELING OF TRANSPORT PROCESSES IN CVD REACTORS<br>CVD反应器传输过程的三维数学模型
%A HE Youduo
%A Y SAHAI Baotou Institute of Iron
%A Steel Technology The Ohio State University
%A USA
%A <br>贺友多
%A Y.SAHAI
%J 金属学报
%D 1989
%I 
%X A mathematical model to represent the fluid flow, temperature distri-bution and mass transfer in CVD reactors has been developed. The model is usedto predict the velocity, temperature, and molar concentration profiles in the taper-ed annulus of a reactor for silicon deposition from SiCl_4 in H_2. Results of theinvestigation contribute to the understanding of the transport processes involved insuch a system. The model can also be used for optimizing the design parameters,such as inlet flow rate, susceptor tilt angle, etc.
%K reactor of chemical vapor deposition
%K velocity field
%K temperature field
%K rate of Si deposition<br>CVD反应器
%K 传输过程
%K 数学模型
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=AB188D3B70B071C57EB64E395D864ECE&jid=B061E1135F1CBDEE96CD96C109FEAD65&aid=AB1D246B9A434936AAC9183E8FF8C2AB&yid=1833A6AA51F779C1&vid=C5154311167311FE&iid=0B39A22176CE99FB&sid=CFAC5CB624A41AFD&eid=BB0EA31DB1B01173&journal_id=0412-1961&journal_name=金属学报&referenced_num=1&reference_num=1