Study of Ni/Pt Ohmic Contacts to P-type GaN
p-GaN与Ni/Pt欧姆接触的研究

In this paper,the formation and current transmission mechanisms of Ni/Pt Ohmic contacts to p-type GaN are investigated.The linear I-V curves indicate that the formation of the Ohmic contact between the Ni/Pt and the GaN is attributed to the decrease of the effective barrier height with the increase of the hole concentration at the interface of p-type GaN contacts with the Ni/Pt when annealing in air.In the range from 148K to 323K,the specific contact resistance R_c is decreased exponentially with the test temperature T.This indicates that the current transmission mechanism of the Ni/Pt Ohmic contacts to the p-type GaN abides by the thermionic emmission theory.