%0 Journal Article
%T Study of Ni/Pt Ohmic Contacts to P-type GaN<br>p-GaN与Ni/Pt欧姆接触的研究
%A CHENG Cai-jing
%A ZHANG Xiang-feng
%A DING Jia-xin
%A <br>成彩晶
%A 张向锋
%A 丁嘉欣
%J 红外
%D 2008
%I 
%X In this paper,the formation and current transmission mechanisms of Ni/Pt Ohmic contacts to p-type GaN are investigated.The linear I-V curves indicate that the formation of the Ohmic contact between the Ni/Pt and the GaN is attributed to the decrease of the effective barrier height with the increase of the hole concentration at the interface of p-type GaN contacts with the Ni/Pt when annealing in air.In the range from 148K to 323K,the specific contact resistance R_c is decreased exponentially with the test temperature T.This indicates that the current transmission mechanism of the Ni/Pt Ohmic contacts to the p-type GaN abides by the thermionic emmission theory.
%K Ohmic contact
%K specific contact resistance
%K I-V curves
%K various temperature measurement
%K current transmission mechanism<br>欧姆接触
%K 单位接触电阻
%K I-V曲线
%K 变温测试
%K 电流传输机制
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=3723000AE493FCE650601982177048B1&aid=0FC51CE43379971215E985767C23A05A&yid=67289AFF6305E306&vid=771469D9D58C34FF&iid=38B194292C032A66&sid=7801E6FC5AE9020C&eid=2A8D03AD8076A2E3&journal_id=1672-8785&journal_name=红外&referenced_num=0&reference_num=11