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红外 2005
Study of Passively Q-switched Mode-locked Nd:YVO_4 Infrared Laser Pumped by Diode Laser with GaAs Absorber Grown at Low Temperature
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Abstract:
A diode-pumped passively Q-switched mode-locked Nd:YV04 laser is demonstrated by using GaAs, an infrared crystal grown at low temperature (LT-GaAs) as an absorber as well as an output coupler. The threshold power at the Q-switching and Q-switching mode locking (QML) are about 2W and 3.6W respectively. The maximum output power of 837mW was obtained at the incident pump power of 8.4W. The Q-switch envelope train with a repetition rate of - 100kHz and the mode-locked pulse train with a repetition rate of - 760 MHz were achieved.
