%0 Journal Article
%T Study of Passively Q-switched Mode-locked Nd:YVO_4 Infrared Laser Pumped by Diode Laser with GaAs Absorber Grown at Low Temperature<br>低温生长GaAs实现半导体泵浦红外激光器被动调Q锁模研究
%A JIANG Qichang ZHUO Zhuang LI Jian CHENG Wenyong
%A <br>姜其畅
%A 卓壮
%A 李健
%A 程文雍
%A 王勇刚
%A 马骁宇
%A 张志刚
%A 王清月
%J 红外
%D 2005
%I 
%X A diode-pumped passively Q-switched mode-locked Nd:YV04 laser is demonstrated by using GaAs, an infrared crystal grown at low temperature (LT-GaAs) as an absorber as well as an output coupler. The threshold power at the Q-switching and Q-switching mode locking (QML) are about 2W and 3.6W respectively. The maximum output power of 837mW was obtained at the incident pump power of 8.4W. The Q-switch envelope train with a repetition rate of - 100kHz and the mode-locked pulse train with a repetition rate of - 760 MHz were achieved.
%K diode-pumped infrared laser
%K Nd:YVO4
%K GaAs grown at low temperature
%K Q- switched mode-locking<br>调Q锁模
%K GaAs
%K 低温生长
%K 红外激光器
%K 半导体泵浦
%K 全固态激光器
%K 泵浦功率
%K 重复频率
%K 饱和吸收体
%K 二极管泵浦
%K 晶体材料
%K 输出功率
%K 锁模脉冲
%K 输出镜
%K 注入
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=3723000AE493FCE650601982177048B1&aid=28CD35C45E9C6D5F&yid=2DD7160C83D0ACED&iid=E158A972A605785F&sid=CA4FD0336C81A37A&eid=D71F48E8E85FF911&journal_id=1672-8785&journal_name=红外&referenced_num=2&reference_num=8