Fabrication of HgCdTe MIS Device and Study of Interface Electrical Characteristics of Passivation Films on It (Ⅱ)
HgCdTe MIS器件的制备及其界面电学特性的研究(下)

The basic principle and steps to measure the interface state density energy distribution of the passivation films in HgCdTe MIS devices by a low and high frequency capacitance combination technology are presented. The study has indicated that the passivation films of self-anodic sulfidization ZnS have met all of the surface passivation requirements of the PV HgCdTe focal plane array (FPA) devices.