%0 Journal Article
%T Fabrication of HgCdTe MIS Device and Study of Interface Electrical Characteristics of Passivation Films on It (Ⅱ)<br>HgCdTe MIS器件的制备及其界面电学特性的研究(下)
%A HE Bo
%A SHI Yan-li
%A XU Jing
%A <br>何波
%A 史衍丽
%A 徐静
%J 红外
%D 2007
%I 
%X The basic principle and steps to measure the interface state density energy distribution of the passivation films in HgCdTe MIS devices by a low and high frequency capacitance combination technology are presented. The study has indicated that the passivation films of self-anodic sulfidization ZnS have met all of the surface passivation requirements of the PV HgCdTe focal plane array (FPA) devices.
%K HgCdTe
%K MIS device
%K surface passivation
%K interface electrical characteristics<br>HgCdTe
%K MIS器件
%K 表面钝化
%K 界面电学特性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=3723000AE493FCE650601982177048B1&aid=B33DE72B197490BC53FCFED2F982C581&yid=A732AF04DDA03BB3&vid=D3E34374A0D77D7F&iid=CA4FD0336C81A37A&sid=BCA2697F357F2001&eid=A04140E723CB732E&journal_id=1672-8785&journal_name=红外&referenced_num=0&reference_num=6