The effect of Ga/N co doping on electronic structure of InSb
Ga/N共掺杂对InSb电子结构的影响

The electronic structure and properties of zinc blende InSb co doped with Ga and N have been investigated by means of the density functional theory based on first principles pseudo potential calculations. It is found that single species of N or Ga doping has a small effect on the band gap of InSb. With Ga and N co doped into InSb, its band gap is changed remarkably with the increase of co doping level of Ga/N.