%0 Journal Article
%T The effect of Ga/N co doping on electronic structure of InSb<br>Ga/N共掺杂对InSb电子结构的影响
%A ZHANG Hui-Yuan
%A XING Huai-Zhong
%A ZHANG Lei
%A <br>张会媛
%A 邢怀中
%A 张蕾
%J 红外与毫米波学报
%D 2012
%I Science Press
%X The electronic structure and properties of zinc blende InSb co doped with Ga and N have been investigated by means of the density functional theory based on first principles pseudo potential calculations. It is found that single species of N or Ga doping has a small effect on the band gap of InSb. With Ga and N co doped into InSb, its band gap is changed remarkably with the increase of co doping level of Ga/N.
%K Electronic structure
%K Ga/N co-doping
%K InSb<br>电子结构
%K Ga/N共掺杂
%K InSb
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=2C5AC4805BBB5B0E53C75122CF860048&yid=99E9153A83D4CB11&vid=4AD960B5AD2D111A&iid=38B194292C032A66&sid=FA89360EB995A8AD&eid=D9AE183D3F5C3C75&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=10