Growth of short-period InAs/GaSb superlattices for infrared sensing
用于红外探测的短周期InAs/GaSb 超晶格材料的生长

As a key photoelectricity technology in high-tech development areas, infrared technology takes an important role in a country's military and civil applications. Compared with the method of molecular beam epitaxy (MBE), metal organic chemical vapor deposition (MOCVD) is more conducive to large-scale production of the growth of superlattices, and has good economic benefits. In this paper, the superlattices proposed bases on the technology of MOCVD on GaSb substrate. Furthermore, the thickness of growth and the optimization of various growth parameters are explored as well as the importance of source flux control is analyzed. The photoluminescence (PL) spectra, transmission electron microscopy (TEM) detection map and the surface topography map show that the superlattice can response to long wave of 10um, and has good surface morphology and epitaxial layer quality.