%0 Journal Article
%T Growth of short-period InAs/GaSb superlattices for infrared sensing<br>用于红外探测的短周期InAs/GaSb 超晶格材料的生长
%A WANG Tao
%A YANG Jin
%A YIN Fei
%A WANG Jing-Wei
%A HU Ya-Nan
%A ZHANG Li-Chen
%A YIN Jing-Zhi
%A <br>汪韬
%A 杨瑾
%A 尹飞
%A 王警卫
%A 胡雅楠
%A 张立臣
%A 殷景致
%J 红外与毫米波学报
%D 2011
%I Science Press
%X As a key photoelectricity technology in high-tech development areas, infrared technology takes an important role in a country's military and civil applications. Compared with the method of molecular beam epitaxy (MBE), metal organic chemical vapor deposition (MOCVD) is more conducive to large-scale production of the growth of superlattices, and has good economic benefits. In this paper, the superlattices proposed bases on the technology of MOCVD on GaSb substrate. Furthermore, the thickness of growth and the optimization of various growth parameters are explored as well as the importance of source flux control is analyzed. The photoluminescence (PL) spectra, transmission electron microscopy (TEM) detection map and the surface topography map show that the superlattice can response to long wave of 10um, and has good surface morphology and epitaxial layer quality.
%K InAs/GaSb superlattices
%K band gap
%K metal organic chemical vapor deposition(MOCVD)
%K the atomic force microscope (AFM)
%K PL spectra<br>InAs/GaSb超晶格
%K 禁带宽度
%K 金属有机物化学气相淀积法
%K (MOCVD)
%K 原子力显微镜（AFM）
%K 光致发光（PL）谱
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=5A63F5AD7FC6A679FE8FE77A6FBB3DD3&yid=9377ED8094509821&vid=340AC2BF8E7AB4FD&iid=B31275AF3241DB2D&sid=B99A53AADE50D922&eid=F9A6B6F259CE5121&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=12