The carrier transportation of photoconductive HgCdTe detector irradiated by CW band off laser
光导型碲镉汞探测器在波段外连续激光辐照下的载流子输运

The response of photoconductive HgCdTe detectors to the irradiation of CW band off laser was studied. It was found that there is a point of inflexion, T0, on the temperature dependence of the voltage response of the detector. The voltage response increases with temperature for temperature of the detector T＜T0, and decreases with temperature for T＞T0. Two time scales are found to be due to the two thermally resistive bonding layers. The inflection temperature is determined by the impurity concentration. For temperature T＜T0, the temperature dependence of the voltage response depends on the variation of mobility of the carrier , whereas T＞T0, thermally generated carriers contribute to the voltage response.