%0 Journal Article
%T The carrier transportation of photoconductive HgCdTe detector irradiated by CW band off laser<br>光导型碲镉汞探测器在波段外连续激光辐照下的载流子输运
%A JIANG Tian
%A ZHENG Xin
%A CHENG Xiang-Ai
%A XU Zhong-Jie
%A JIANG Hou-Man
%A LU Qi-Sheng
%A <br>江天
%A 郑鑫
%A 程湘爱
%A 许中杰
%A 江厚满
%A 陆启生
%J 红外与毫米波学报
%D 2012
%I Science Press
%X The response of photoconductive HgCdTe detectors to the irradiation of CW band off laser was studied. It was found that there is a point of inflexion, T0, on the temperature dependence of the voltage response of the detector. The voltage response increases with temperature for temperature of the detector T＜T0, and decreases with temperature for T＞T0. Two time scales are found to be due to the two thermally resistive bonding layers. The inflection temperature is determined by the impurity concentration. For temperature T＜T0, the temperature dependence of the voltage response depends on the variation of mobility of the carrier , whereas T＞T0, thermally generated carriers contribute to the voltage response.
%K band-off laser
%K photoconductive detector
%K thermally generated carriers
%K mobility<br>波段外激光
%K 光导型碲镉汞探测器
%K 热激发载流子
%K 迁移率
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=2C5AC4805BBB5B0EF44A6FE52855A6B4&yid=99E9153A83D4CB11&vid=4AD960B5AD2D111A&iid=38B194292C032A66&sid=CEC789B3C68C3BB3&eid=8B59EA573021D671&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=13