The effect of Si co-doping on defect-induced intrinsic magnetism in GaN
Si掺杂对缺陷诱导的GaN磁性的影响

Using the first principle method within the local spin density approximation, both the magnetism of defect induced in GaN and the effect of Si co-doping on the magnetism in GaN with defect. It is found that defect induced intrinsic magnetic moment of GaN is 3 , while the magnetic moment is quenched to 2 in Si co-doping GaN:Si. The moment decreases with increasing of the concentration of Si. The result is very helpful for experiment.