%0 Journal Article
%T The effect of Si co-doping on defect-induced intrinsic magnetism in GaN<br>Si掺杂对缺陷诱导的GaN磁性的影响
%A ZHANG Lei
%A XING Huai-Zhong
%A HUANG Yan
%A ZHANG Hui-Yuan
%A WANG Ji-Qing
%A <br>张蕾
%A 邢怀中
%A 黄燕
%A 张会媛
%A 王基庆
%J 红外与毫米波学报
%D 2011
%I Science Press
%X Using the first principle method within the local spin density approximation, both the magnetism of defect induced in GaN and the effect of Si co-doping on the magnetism in GaN with defect. It is found that defect induced intrinsic magnetic moment of GaN is 3 , while the magnetic moment is quenched to 2 in Si co-doping GaN:Si. The moment decreases with increasing of the concentration of Si. The result is very helpful for experiment.
%K GaN:Si
%K the first principles
%K magnetism<br>GaN:Si
%K 第一性原理
%K 磁性
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=4CEA2113DCD5129EB08C264F1A14855C&yid=9377ED8094509821&vid=340AC2BF8E7AB4FD&iid=38B194292C032A66&sid=F8035C8B7D8A4264&eid=FD7C952458BFB5D8&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=0&reference_num=0