STUDY OF HYDROGENATION ON HgCdTe PHOTOVOLTAIC DETECTORS
碲镉汞光伏型探测器的氢化处理研究

The hydrogenation of HgCdTe photovoltaic(PV) detectors by H-plasma was investigated. It was found that the ratio of signal to noise and resistance at zero bias of the detectors passivated with ZnS were obviously improved after hydrogenation. Via a comparative study that the P-type zone was protected by photoresist or not, it was infered that hydrogenation effects mainly happened on the P-type zone of the detectors. By SIMS analysis H was found to penetrate through ZnS and reach the interface between ZnS and HgCdTe, and the improvement of performance after hydrogenation was due to the passivation of interface states by H ions, which resulted in a decrease of interface states and surface leakage current, thus the break-down voltage and resistance of the junction were increased.