%0 Journal Article
%T STUDY OF HYDROGENATION ON HgCdTe PHOTOVOLTAIC DETECTORS<br>碲镉汞光伏型探测器的氢化处理研究
%A QIAO Hui
%A ZHOU Wen-Hong
%A YE Zhen-Hua
%A LI Xiang-Yang
%A GONG Hai-Mei
%A <br>乔辉
%A 周文洪
%A 叶振华
%A 李向阳
%A 龚海梅
%J 红外与毫米波学报
%D 2007
%I Science Press
%X The hydrogenation of HgCdTe photovoltaic(PV) detectors by H-plasma was investigated. It was found that the ratio of signal to noise and resistance at zero bias of the detectors passivated with ZnS were obviously improved after hydrogenation. Via a comparative study that the P-type zone was protected by photoresist or not, it was infered that hydrogenation effects mainly happened on the P-type zone of the detectors. By SIMS analysis H was found to penetrate through ZnS and reach the interface between ZnS and HgCdTe, and the improvement of performance after hydrogenation was due to the passivation of interface states by H ions, which resulted in a decrease of interface states and surface leakage current, thus the break-down voltage and resistance of the junction were increased.
%K hydrogenation
%K passivation
%K photovoltaic detector
%K HgCdTe<br>氢化
%K 钝化
%K 光伏探测器
%K 碲镉汞
%U http://www.alljournals.cn/get_abstract_url.aspx?pcid=5B3AB970F71A803DEACDC0559115BFCF0A068CD97DD29835&cid=1319827C0C74AAE8D654BEA21B7F54D3&jid=D3B4F771D1A06062008B4D0A2EF05996&aid=74AFC60BBB224B78&yid=A732AF04DDA03BB3&vid=96C778EE049EE47D&iid=94C357A881DFC066&sid=377D325742940769&eid=A5B34D9E8FDA439A&journal_id=1001-9014&journal_name=红外与毫米波学报&referenced_num=1&reference_num=8